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Bringing Nondispersive Theres a new component architecture for mass-market gas sensors based on photonic bandgap and MEMS fabrication technologies. This combination provides high-quality gas and chemical sensors at consumer prices.
Brian R. Kinkade, Two groups of gas sensor technologies are competing in two distinct market segmentsaffordable but less reliable chemical-reaction sensors for consumer markets and reliable but expensive IR spectroscopic sensors for industrial, laboratory, and medical instrumentation markets. High-volume mass-market applications are limited to carbon monoxide (CO) detectors and onboard automotive emissions sensors (see Photo 1). But because of reliability problems with electrochemical CO detectors, theres a hesitancy to apply these sensors in other high-volume applications. Natural gas leak detection, noninvasive blood glucose monitoring, and home and personal air quality monitors need small, efficient, accurate, sensitive, reliable, and inexpensive sensors. Connecting an array of these sensors to wireless networks (which are starting to proliferate) creates many other applications. For example, city emissions regulators could monitor emissions sources from their desks. A new component architecture for mass-market gas sensors is being developed that combines MEMS technology with nondispersive IR (NDIR) spectroscopy. These new photonic bandgap and MEMS fabrication technologies will simplify the component technology to provide high-quality gas and chemical sensors that can be priced for the consumer market. IR Gas Sensors
NDIR sensors deliver high accuracy and fast response time. And because they dont require contact with the environment, theyre more reliable. Typically, these sensors detect a specific gas (or set of gases) and are unaffected by other gases. NDIR gas sensors consist of several discrete components, making them more complex and more expensive than electrochemical sensors. Development efforts for the discrete component IR gas sensors are focused on incrementally reducing the cost, size, and power consumption of the components. NDIR sensors are based on the fact that most gases have unique IR absorption signatures in the 214 µm region. Figure 1 presents the absorption spectra of several of these compounds. Notice that each species has a unique characteristic wavelength. The uniqueness of each gas absorption spectra enables conclusive identification and quantification of chemicals in liquid and gas phase mixtures.
A simple NDIR sensor consists of an IR light source; a sample compartment (of known optical length); an optical filter; and an IR detector, with its associated electronics. The optical filter allows the detector to selectively monitor only the part of the IR spectrum specifically affected by the gas of interest. As shown in Figure 2, as the gas of interest passes between the powered IR source and the detector, the absorption spectra change along with the detectors output. The electronics can be designed to detect when the gas reaches a dangerous level and then set off an alarm when the concentration is too high. Sensor Improvements The simple single NDIR gas sensor in Figure 2 can be modified to measure multiple gases by adding additional optical filters and detectors, along with the optics for directing the IR energy. Most multigas NDIR-based sensors are limited to three or four spectral channels to maintain good SNR while dividing the light among multiple channels. For some applications (e.g., combustible gases), there is a partial overlap in the spectral lines. For this situation, a measurement is made of the interfering gass concentration at another spectral point. The concentration is then used to adjust the measurement of the gas of concern.
Another contributor to measurement error are changes in the level of overall IR energy in the system. These might be due to source illumination variation, light scattering from particulates, or degradation of the optics (typically seen as film buildup). Because the level of IR energy falling on the detector is important to the measurement, many instrument manufacturers measure the IR energy at a reference wavelength that is unaffected by the gas. Then as the IR energy changes, the measurement can be corrected. CO concentration in air, for example, can be reliably determined by measuring attenuation at 4.65 µm and at a reference wavelength of, say, 3.9 µm. Thermal drift can also contribute to meas urement error. When the IR source runs continuously, it heats up the sample compartment. One way to correct the measurement is to simply measure the ambient temperature and apply an empirically derived correction factor. Another method is to mechanically chop the energy from the IR source using a chopper wheel (or tuning fork). Then a dark reference meas urement can be made when the sources energy is blocked off. This modulation technique is also useful with pyroelectric detectors because they require a modulation of IR energy to generate a measurement signal. Chopper wheels and tuning forks can add complexity and increase the size of the sensor. Since 1997, Ion Optics has been making an electrically pulsed IR source (see Figure 3) that allows the NDIR gas sensor designer to eliminate the chopper and its associated electronics. With a thin foil filament, the pulsIR source can achieve >82% intensity modulation (representing 700ºC of temperature modulation) for pulse rates <2 Hz. The company uses ion beams to treat the surface of the foil filaments to improve their IR emission. This treatment allows the IR sources to be run cooler while still providing significant in-band illumination over a desired waveband in the 220 µm region. Cooler operation lessens the heating of the sample compartment. Ion Optics has also determined that the output of the IR sources is stable and can be monitored and controlled by electrically monitoring the electrical drive waveform. An IR Gas Sensor Chip
Ion Optics is focusing its efforts on reducing the complexity of the NDIR gas sensor by integrating the optical filter, detector, and IR source on a single chip. The company expects the emitter and detector to each be silicon microbridges. Combining the active elements of the sensor lets the company use inexpensive, molded plastic optics (see Figure 4). The function of the optical filter will be replaced with surface texturing of the emitter and detector. Using standard lithography practices, Ion Optics will texture the surface with structures similar to photonic bandgap (PBG) designs being used for microwave transmission/reflection filters. A PBG structure is an artificially engineered periodic dielectric array in which the propagation of electromagnetic waves is governed by band structure-like dispersion [1,2]. When electromagnetic waves with wavelengths on the order of the period of the dielectric array propagate through the structure, the light interacts in a manner analogous to that of electrons in a periodic symmetric array of atoms (or crystal). The structure exhibits allowed and forbidden exten ded states, a reciprocal lattice, Brillouin zones, and Bloch wave functions [1,3]. The photonic bandgap structures, or photonic crystals, have been developed as transmission/reflection filters and low-loss light-bending waveguides and for inhibiting spontaneous emission of light in semiconductors, which can lead to zero-threshold diode lasers [4].
In many ways, PBGs are similar to metal grid structures that have been recognized as spectrally selective filters at microwave, millimeter, and far IR wavelengths [5,6,7]. The grids depicted in Figure 5 show metal mesh and crossed dipole structures and their resulting transmission spectra. The transmission curves exhibit a narrow bandpass, which is related to feature size. Theres also been recent work with lamellar (1D) gratings in silicon that has shown that the IR transmission spectrum of the grating exhibits pass and stop bands, which are related to grating line width and spacing [8].
Most attention given to PBG structures treats them only as filters or waveguides. Ion Optics believes that a PBG structure will also act as a tuned band emitter because according to Kirchoffs law, absorbance and emittance are equivalent. Design Objectives The goal is to develop an IR thermal emitter with high emissivity over a narrow band of wavelengths ( By making the half-width of the IR emission similar to the half-width of the gas absorption peaks (i.e.,
Figure 7 shows that as emission half-width decreases from 0.5 to 0.1, sensitivity to CO improves from 2.5 ppm to 0.9 ppm (pulsIR at 800K, 100 cm path length). The sensitivity to small changes in CO2 concentration is greatly reduced as overlap is reduced. Measured Results Ion Optics selected patterns based on the work of Byrne et al. [8,9] because of the relatively simple relation given and demonstrated between feature size and transmission wavelength. Specifically, the company used the crossed dipole pattern depicted in Figure 5 and built a variety of feature sizes and spacings. Dupont made the photomasks using direct-write e-beam lithography. The etching and lithography were performed at the Microdevices Laboratory at the Jet Propulsion Laboratory. The basic fabrication sequence was as follows: deposit photoresist; expose pattern on resist; reactive ion etch (RIE) for 5, 10, or 15 min. to form the cross-shaped cavities of different depths with straight side walls; and remove photoresist.
Five n and two n+ wafers were processed. One n and one n+ wafer were coated with 500A chromium (for adhesion), followed by 1000A gold, before lifting off with the removal of the photoresist, leaving gold coating at the bottom of the etched cavities. In another case, an n wafer was coated with aluminum to suppress the background emissivity. In this case, metal covered the un etched regions as well as the bottom of the cavities.
Scanning electron microscopy (SEM) confirmed etched cavity depth and verified that the side walls were straight. Reflectance spectra were measured at room temperature over a range of 2.525 µm using a MIDAC FTIR spectrometer (0.5 cm1 resolution) with a surface reflectance attachment that set the angle of incidence at 45°.
Thermal emittance measurements and additional room temperature reflectance measurements at near normal incidence were made over a range of 311 µm using a chalcogenide fiber-coupled MIDAC FTIR spectrometer with MCT detector (0.4 cm1 resolution). During the emittance measurements, samples were placed on top of a thin (~1 mm) graphite sheet on a hot plate or heated sample stage and confirmed to be at 300ºC, 400ºC, or 500ºC, with a Type K thermocouple. SEM measurements (see Figure 8) confirmed that the etch depth was ~2.2 m for samples etched 5 min., about 6.2 µm for samples etched 10 min., and about 9.4 µm for samples etched for 15 min. Actual depths varied ±5%, depending on the width of the structure. For example, features with the N designation (for narrow line width) were generally etched to lesser depths than those designated B (for broad line width). Thermal emittance measurements showed enhanced emissivity for wavelengths in the range of 511 µm (long wavelength limit established by the fiber-coupled FTIR), depending on feature size. For features with narrow line width (labeled N), the enhancement is slight, but for the larger features (labeled B), the enhancement is significant. The company then had controllable band emission with tuning over nearly an octave in the mid-IR spectrum. The relation between feature size and emittance peak is further illustrated in Figure 9. The data in Figure 10 from a PBG surface structure demonstrate that thermal radiation from a designed textured surface can be concentrated in a narrow band with low values of Conclusion
Experiments at Ion Optics show early success in being able to texture the surface to create tuned band emission and tuned band detection. By measuring the emission and reflectance of several patterned silicon surfaces, Ion Optics has determined that the peak absorbance wavelength and line width correlate with feature size and spacing, as well as with surface conductivity. Acknowledgment The tuned band emitter development was done under National Science Foundation Small Business Innovation Research (SBIR) grant # DMI-9860975 and National Institute of Standards and Technology (NIST) Advanced Technology Program (ATP) contract # ATP-99-01-2051. References 1. E. Yablonovitch and T.J. Gmitter. 1989. Phys. Rev. Lett., 63:1950. 2. E. Yablonovitch and T.J. Gmitter. 1991. Phys. Rev. Lett., 67:3380. 3. E. Yablonovich. 1993. J. Phys.: Condens. Matter, 5:2443. 4. E. Yablonovitch. 1987. Phys. Rev. Lett., 58:2059. 5. S.T. Chase and R.D. Joseph. 1983. Appl. Optics, 22: 1775. 6. D.M. Byrne et al. 1985. J. Vac. Sci. Technol. B 3:268. 7. D.M. Byrne. 1985. Proc. SPIE, 560:70. 8. S. Hava, J. Ivri, and M. Auslender. 1998. J. Appl. Phys., 83:1654. 9. S. Akbar, C-C Wang, and L. Wang. June 1996. Ceramic Materials May Revolutionize Automotive Emissions Control, Ceramic Industry:32. Brian R. Kinkade is Vice President of Mar keting and Sales, Ion Optics, Inc., 411 Waverley Oaks Rd., Ste. 144, Waltham, MA 02454; 781-788-8777, x-103, fax 781-788-8811, |
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